BC856AW,115
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- Mfr.Part #
- BC856AW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT323
- Stock
- 1,641
- In Stock ：
- 1,641
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Collector-Base Capacitance-Max :
- 5pF
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 65V
- Collector Emitter Breakdown Voltage :
- 65V
- Transistor Type :
- PNP
- Max Power Dissipation :
- 200mW
- Max Breakdown Voltage :
- 65V
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Base Part Number :
- BC856
- Collector Base Voltage (VCBO) :
- 80V
- Frequency :
- 100MHz
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- SC-70, SOT-323
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Datasheets
- BC856AW,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856AW,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC856AW,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856AW,115 Applications
There are a lot of Nexperia USA Inc.
BC856AW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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