BC856ALT3
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- Mfr.Part #
- BC856ALT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT23-3
- Stock
- 21,846
- In Stock ：
- 21,846
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -650mV
- JEDEC-95 Code :
- TO-236AB
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 650mV
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-G3
- JESD-609 Code :
- e0
- Current - Collector (Ic) (Max) :
- 100mA
- Lead Free :
- Contains Lead
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 240
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Current Rating :
- -100mA
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -65V
- HTS Code :
- 8541.21.00.95
- Collector Base Voltage (VCBO) :
- -80V
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 65V
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Max Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- hFE Min :
- 90
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 100mA
- Datasheets
- BC856ALT3
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC856ALT3 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 125 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -650mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC856ALT3 Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856ALT3 Applications
There are a lot of ON Semiconductor
BC856ALT3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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