BC856ALT1
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- Mfr.Part #
- BC856ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 100MA SOT23
- Stock
- 41,476
- In Stock ：
- 41,476
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 65V
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Terminal Form :
- Gull wing
- Current Rating :
- -100mA
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- hFE Min :
- 125
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Length :
- 2.9mm
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Height :
- 940μm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Cut Tape (CT)
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 65V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 65V
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- -65V
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 5 Weeks
- Published :
- 2005
- Max Collector Current :
- 100mA
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- -650mV
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Datasheets
- BC856ALT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC856ALT1G Overview
DC current gain in this device equals 125 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 65V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC856ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856ALT1G Applications
There are a lot of ON Semiconductor
BC856ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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