BC856,215
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- Mfr.Part #
- BC856,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A TO236AB
- Stock
- 2,404
- In Stock ：
- 2,404
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 65V
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Series :
- Automotive, AEC-Q101
- REACH SVHC :
- No SVHC
- Published :
- 2001
- Height :
- 1mm
- Max Breakdown Voltage :
- 65V
- Collector Emitter Breakdown Voltage :
- 65V
- Width :
- 1.4mm
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Power Dissipation :
- 250mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- BC856
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Max Power Dissipation :
- 250mW
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 650mV
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 80V
- Mounting Type :
- Surface Mount
- Length :
- 3mm
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Terminal Form :
- Gull wing
- Datasheets
- BC856,215
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC856,215 Overview
DC current gain in this device equals 125 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 65V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC856,215 Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856,215 Applications
There are a lot of Nexperia USA Inc.
BC856,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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