BC850CMTF
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- Mfr.Part #
- BC850CMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 17,505
- In Stock ：
- 17,505
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Base Part Number :
- BC850
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Published :
- 2011
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Length :
- 2.92mm
- Max Breakdown Voltage :
- 45V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 310mW
- Transition Frequency :
- 300MHz
- Terminal Position :
- Dual
- hFE Min :
- 110
- Max Collector Current :
- 100mA
- Voltage - Rated DC :
- 45V
- Current Rating :
- 100mA
- Number of Elements :
- 1
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Weight :
- 30mg
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 200mV
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Frequency :
- 300MHz
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Width :
- 1.3mm
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Height :
- 930μm
- Collector Base Voltage (VCBO) :
- 50V
- Gain Bandwidth Product :
- 300MHz
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Power Dissipation :
- 310mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC850CMTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850CMTF Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC850CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC850CMTF Applications
There are a lot of ON Semiconductor
BC850CMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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