BC850BW,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

45V

Frequency :

100MHz

Additional Feature :

LOW NOISE

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Power Dissipation :

200mW

Gain Bandwidth Product :

100MHz

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Base Part Number :

BC850

ECCN Code :

EAR99

Max Collector Current :

100mA

Factory Lead Time :

4 Weeks

Number of Pins :

3

Element Configuration :

Single

Terminal Form :

Gull wing

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

45V

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Qualification Status :

Not Qualified

JESD-609 Code :

e3

VCEsat-Max :

0.6 V

Terminal Position :

Dual

Published :

2009

Transition Frequency :

100MHz

Package / Case :

SC-70, SOT-323

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Pin Count :

3

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Base Voltage (VCBO) :

50V

Number of Terminations :

3

Contact Plating :

Tin

Series :

Automotive, AEC-Q101

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Number of Elements :

1

Max Power Dissipation :

200mW