BC850BW,115
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- Mfr.Part #
- BC850BW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT323
- Stock
- 14,936
- In Stock ：
- 14,936
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Base Part Number :
- BC850
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 45V
- Package / Case :
- SC-70, SOT-323
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- VCEsat-Max :
- 0.6 V
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 45V
- Frequency :
- 100MHz
- Published :
- 2009
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 200mW
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Power Dissipation :
- 200mW
- hFE Min :
- 200
- Datasheets
- BC850BW,115
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC850BW,115 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC850BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC850BW,115 Applications
There are a lot of Nexperia USA Inc.
BC850BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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