BC850BLT1
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- Mfr.Part #
- BC850BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 7,838
- In Stock ：
- 7,838
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 3.04mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Finish :
- Tin (Sn)
- Width :
- 1.4mm
- Transistor Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Base Part Number :
- BC850*L
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- hFE Min :
- 200
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2007
- Current Rating :
- 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 100MHz
- Voltage - Rated DC :
- 45V
- Height :
- 1.11mm
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 225mW
- Max Collector Current :
- 100mA
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 600mV
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 45V
- Lead Free :
- Lead Free
- Datasheets
- BC850BLT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850BLT1G Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC850BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC850BLT1G Applications
There are a lot of ON Semiconductor
BC850BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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