BC638TA
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- Mfr.Part #
- BC638TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A TO92-3
- Stock
- 1,328
- In Stock ：
- 1,328
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 40
- Pbfree Code :
- yes
- Current Rating :
- -1A
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Width :
- 3.86mm
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Packaging :
- Tape and Box (TB)
- Factory Lead Time :
- 6 Weeks
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Height :
- 4.58mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- -60V
- Max Breakdown Voltage :
- 60V
- Length :
- 4.58mm
- Emitter Base Voltage (VEBO) :
- -5V
- Power Dissipation :
- 1W
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Weight :
- 240mg
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Base Part Number :
- BC638
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- -60V
- Published :
- 2007
- Max Collector Current :
- 1A
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 1W
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- -500mV
- Mounting Type :
- Through Hole
- Datasheets
- BC638TA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC638TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BC638TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
BC638TA Applications
There are a lot of ON Semiconductor
BC638TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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