BC638,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

BC638

Terminal Finish :

Matte Tin (Sn)

Voltage - Collector Emitter Breakdown (Max) :

60V

Number of Elements :

1

Mounting Type :

Through Hole

Surface Mount :

No

Packaging :

Tape and Box (TB)

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

830mW

Number of Terminations :

3

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8541.21.00.95

Pbfree Code :

yes

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Configuration :

Single

Current - Collector (Ic) (Max) :

1A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

0.8W

Terminal Position :

BOTTOM

JESD-30 Code :

O-PBCY-T3

Transistor Type :

PNP

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transition Frequency :

100MHz

JESD-609 Code :

e3

VCEsat-Max :

0.5 V

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Published :

2004

Frequency - Transition :

100MHz

Transistor Application :

AMPLIFIER