BC636TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

2 Weeks

Collector Emitter Voltage (VCEO) :

45V

Mounting Type :

Through Hole

Max Collector Current :

1A

Transition Frequency :

100MHz

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Gain Bandwidth Product :

100MHz

Voltage - Rated DC :

-45V

Published :

2009

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Breakdown Voltage :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Packaging :

Tape and Box (TB)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

hFE Min :

40

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

4.58mm

Number of Pins :

3

Qualification Status :

Not Qualified

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

-5V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Polarity/Channel Type :

PNP

Collector Emitter Breakdown Voltage :

45V

Base Part Number :

BC636

Collector Emitter Saturation Voltage :

-500mV

Transistor Element Material :

SILICON

Frequency :

100MHz

Width :

3.86mm

Max Power Dissipation :

1W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Terminal Position :

BOTTOM

Weight :

240mg

Power Dissipation :

1W

Number of Terminations :

3

Height :

4.58mm

Transistor Type :

PNP

Current Rating :

-1A

Number of Elements :

1

Collector Base Voltage (VCBO) :

-45V

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Contact Plating :

Tin