BC373ZL1G
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- Mfr.Part #
- BC373ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A TO92
- Stock
- 4,216
- In Stock ：
- 4,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 1.1V
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Tape and Box (TB)
- Voltage - Rated DC :
- 80V
- Current Rating :
- 1A
- Polarity :
- NPN
- Published :
- 2006
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Additional Feature :
- EUROPEAN PART NUMBER
- Transition Frequency :
- 200MHz
- Max Collector Current :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Transistor Type :
- NPN - Darlington
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Base Part Number :
- BC373
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 250μA, 250mA
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 1A
- JESD-609 Code :
- e1
- Emitter Base Voltage (VEBO) :
- 12V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Frequency - Transition :
- 200MHz
- Pin Count :
- 3
- hFE Min :
- 8000
- Collector Base Voltage (VCBO) :
- 80V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Voltage (VCEO) :
- 80V
- Reach Compliance Code :
- Unknown
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Max Power Dissipation :
- 625mW
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- BC373ZL1G
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC373ZL1G Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 250μA, 250mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC373ZL1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC373ZL1G Applications
There are a lot of ON Semiconductor
BC373ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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