BC372G
- Mfr.Part #
- BC372G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 1A TO92
- Stock
- 4,371
- In Stock :
- 4,371
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 1.1V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 12V
- Current Rating :
- 1A
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Number of Terminations :
- 3
- Transition Frequency :
- 200MHz
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Element Configuration :
- Single
- Frequency - Transition :
- 200MHz
- Transistor Type :
- NPN - Darlington
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- hFE Min :
- 8000
- ECCN Code :
- EAR99
- Published :
- 2006
- Max Collector Current :
- 1A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 250μA, 250mA
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Datasheets
- BC372G
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NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC372G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 12V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
BC372G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC372G Applications
There are a lot of ON Semiconductor
BC372G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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