BC372

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Collector Current :

1A

Terminal Finish :

Tin/Lead (Sn/Pb)

hFE Min :

8000

Voltage - Rated DC :

100V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

100V

Peak Reflow Temperature (Cel) :

240

Collector Emitter Saturation Voltage :

1.1V

Qualification Status :

Not Qualified

Mount :

Through Hole

Frequency - Transition :

200MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Reach Compliance Code :

not_compliant

Mounting Type :

Through Hole

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

100V

Power Dissipation :

625mW

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 250μA, 250mA

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

12V

Current Rating :

1A

Transition Frequency :

200MHz

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Pin Count :

3

Collector Emitter Breakdown Voltage :

100V

Polarity :

NPN

Terminal Position :

BOTTOM

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

Max Collector Current :

1A

Transistor Type :

NPN - Darlington

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

JESD-609 Code :

e0

Published :

2006

Max Power Dissipation :

625mW

Lead Free :

Contains Lead