ATP106-TL-H
- Mfr.Part #
- ATP106-TL-H
- Manufacturer
- onsemi
- Package / Case
- ATPAK (2 leads+tab)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 30A ATPAK
- Stock
- 8,834
- In Stock :
- 8,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 15A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 12 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Continuous Drain Current (ID) :
- 30A
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Halogen Free :
- Halogen Free
- Power Dissipation-Max :
- 40W Tc
- Length :
- 6.5mm
- Pin Count :
- 3
- Turn-Off Delay Time :
- 110 ns
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 90 ns
- Drain to Source Breakdown Voltage :
- 40V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1380pF @ 20V
- Width :
- 7.3mm
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- 150°C TJ
- Package / Case :
- ATPAK (2 leads+tab)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Element Configuration :
- Single
- Number of Pins :
- 3
- Published :
- 2009
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Rise Time :
- 120ns
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- JESD-609 Code :
- e6
- Current - Continuous Drain (Id) @ 25°C :
- 30A Ta
- FET Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 40W
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Height :
- 1.5mm
- Datasheets
- ATP106-TL-H

P-Channel Tape & Reel (TR) 25m Ω @ 15A, 10V ±20V 1380pF @ 20V 29nC @ 10V ATPAK (2 leads+tab)
ATP106-TL-H Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1380pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
ATP106-TL-H Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 110 ns
ATP106-TL-H Applications
There are a lot of ON Semiconductor
ATP106-TL-H applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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