ATP108-TL-H
- Mfr.Part #
- ATP108-TL-H
- Manufacturer
- onsemi
- Package / Case
- ATPAK (2 leads+tab)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 70A ATPAK
- Stock
- 1,573
- In Stock :
- 1,573
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Published :
- 2009
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- JESD-609 Code :
- e6
- Contact Plating :
- Tin
- FET Type :
- P-Channel
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- -40V
- Continuous Drain Current (ID) :
- 70A
- Turn On Delay Time :
- 19 ns
- Factory Lead Time :
- 5 Weeks
- Fall Time (Typ) :
- 290 ns
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 340 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 79.5nC @ 10V
- Power Dissipation :
- 60W
- Current - Continuous Drain (Id) @ 25°C :
- 70A Ta
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 10.4m Ω @ 35A, 10V
- Pin Count :
- 3
- Power Dissipation-Max :
- 60W Tc
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 340ns
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Weight :
- 3.949996g
- Input Capacitance (Ciss) (Max) @ Vds :
- 3850pF @ 20V
- Drain to Source Voltage (Vdss) :
- 40V
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- ATPAK (2 leads+tab)
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- 150°C TJ
- Datasheets
- ATP108-TL-H

P-Channel Tape & Reel (TR) 10.4m Ω @ 35A, 10V ±20V 3850pF @ 20V 79.5nC @ 10V 40V ATPAK (2 leads+tab)
ATP108-TL-H Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3850pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -40V.As a result of its turn-off delay time, which is 340 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 19 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
ATP108-TL-H Features
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 340 ns
a 40V drain to source voltage (Vdss)
ATP108-TL-H Applications
There are a lot of ON Semiconductor
ATP108-TL-H applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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