ATP101-TL-H
- Mfr.Part #
- ATP101-TL-H
- Manufacturer
- onsemi
- Package / Case
- ATPAK (2 leads+tab)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 25A ATPAK
- Stock
- 37,764
- In Stock :
- 37,764
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Halogen Free :
- Halogen Free
- Turn-Off Delay Time :
- 80 ns
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- FET Type :
- P-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pulsed Drain Current-Max (IDM) :
- 75A
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Vgs (Max) :
- ±20V
- Rise Time :
- 70ns
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2012
- Length :
- 6.5mm
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 70 ns
- JESD-609 Code :
- e6
- Gate Charge (Qg) (Max) @ Vgs :
- 18.5nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 25A
- Width :
- 7.3mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta
- Drain to Source Breakdown Voltage :
- 30V
- Height :
- 1.5mm
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 30W
- Input Capacitance (Ciss) (Max) @ Vds :
- 875pF @ 10V
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 30W Tc
- Turn On Delay Time :
- 9.2 ns
- Package / Case :
- ATPAK (2 leads+tab)
- Surface Mount :
- yes
- Avalanche Energy Rating (Eas) :
- 25 mJ
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 13A, 10V
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Datasheets
- ATP101-TL-H

P-Channel Tape & Reel (TR) 30m Ω @ 13A, 10V ±20V 875pF @ 10V 18.5nC @ 10V ATPAK (2 leads+tab)
ATP101-TL-H Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 25 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 875pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 25A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 75A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
ATP101-TL-H Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 75A.
ATP101-TL-H Applications
There are a lot of ON Semiconductor
ATP101-TL-H applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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