ATP114-TL-H
- Mfr.Part #
- ATP114-TL-H
- Manufacturer
- onsemi
- Package / Case
- ATPAK (2 leads+tab)
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 55A ATPAK
- Stock
- 3,635
- In Stock :
- 3,635
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e6
- Halogen Free :
- Halogen Free
- Number of Pins :
- 3
- Factory Lead Time :
- 16 Weeks
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Operating Temperature :
- 150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 20V
- Turn On Delay Time :
- 19 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- Rise Time :
- 200ns
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 55A Ta
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Package / Case :
- ATPAK (2 leads+tab)
- FET Type :
- P-Channel
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 60W Tc
- Published :
- 2010
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- Turn-Off Delay Time :
- 450 ns
- Drain to Source Breakdown Voltage :
- 60V
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 28A, 10V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 300 ns
- Continuous Drain Current (ID) :
- 55A
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Power Dissipation :
- 60W
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- ATP114-TL-H

P-Channel Tape & Reel (TR) 16m Ω @ 28A, 10V ±20V 4000pF @ 20V 92nC @ 10V ATPAK (2 leads+tab)
ATP114-TL-H Overview
A device's maximum input capacitance is 4000pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 55A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 450 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
ATP114-TL-H Features
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 450 ns
ATP114-TL-H Applications
There are a lot of ON Semiconductor
ATP114-TL-H applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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