ATF-58143-TR2G

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Contact Plating :

Tin

Lead Free :

Lead Free

Continuous Drain Current (ID) :

100mA

Drain to Source Voltage (Vdss) :

5V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure :

0.5dB

Number of Terminations :

4

Terminal Position :

Dual

Gain :

16.5dB

Current Rating :

100mA

Case Connection :

SOURCE

Transistor Type :

pHEMT FET

Voltage - Rated DC :

3V

Base Part Number :

ATF-58143

Published :

2005

Power - Output :

19dBm

FET Technology :

HIGH ELECTRON MOBILITY

Gate to Source Voltage (Vgs) :

1V

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Max Power Dissipation :

500mW

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

5V

Mount :

Surface Mount

Frequency :

2GHz

RoHS Status :

RoHS Compliant

Configuration :

Single

Packaging :

Tape and Reel (TR)

Current - Test :

30mA

Min Operating Temperature :

-65°C

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

6 Weeks

Number of Pins :

4

Drain Current-Max (Abs) (ID) :

0.1A

Max Operating Temperature :

150°C

Package / Case :

SC-82A, SOT-343

Number of Elements :

1

JESD-609 Code :

e3