ATF-36077-STR
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- Mfr.Part #
- ATF-36077-STR
- Manufacturer
- Broadcom
- Package / Case
- 4-SMD (77 Pack)
- Datasheet
- Download
- Description
- FET RF 3V 12GHZ 77-SMD
- Stock
- 6,486
- In Stock ：
- 6,486
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- Manufacturer :
- Broadcom
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Additional Feature :
- LOW NOISE
- Operating Mode :
- Depletion Mode
- Voltage - Rated DC :
- 3V
- Noise Figure :
- 0.5dB
- Gate to Source Voltage (Vgs) :
- -3V
- Terminal Position :
- Radial
- Frequency :
- 12GHz
- Nominal Supply Current :
- 10mA
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 4
- Terminal Form :
- Flat
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 1.5V
- REACH SVHC :
- No SVHC
- Power - Output :
- 5dBm
- Min Operating Temperature :
- -65°C
- Max Operating Temperature :
- 150°C
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- JESD-609 Code :
- e4
- Contact Plating :
- Gold
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Unknown
- Number of Pins :
- 4
- Published :
- 1999
- Current Rating :
- 45mA
- Peak Reflow Temperature (Cel) :
- 260
- Gain :
- 12dB
- Package / Case :
- 4-SMD (77 Pack)
- FET Technology :
- HIGH ELECTRON MOBILITY
- Voltage - Test :
- 1.5V
- Number of Elements :
- 1
- Max Power Dissipation :
- 180mW
- Transistor Type :
- pHEMT FET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- SOURCE
- Continuous Drain Current (ID) :
- 25mA
- Configuration :
- Single
- DS Breakdown Voltage-Min :
- 3V
- Datasheets
- ATF-36077-STR
ATF-36077-STR Documents
ATF-36077-STR datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Broadcom Limited stock available at
The Broadcom Transistors - FETs, MOSFETs - RF ATF-36077-STR are designed for use in a variety of RF applications, such as amplifiers, mixers, oscillators, and switches. They are also suitable for use in low noise amplifiers, low power amplifiers, and high frequency amplifiers. These transistors are designed to provide high performance and reliability in a wide range of RF applications.
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