ATF-33143-TR1G

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Power Dissipation Ambient-Max :

0.6 W

Number of Terminals :

4

Additional Feature :

LOW NOISE

Manufacturer :

Broadcom Limited

Package Shape :

RECTANGULAR

Surface Mount :

yes

DS Breakdown Voltage-Min :

5.5 V

Transistor Application :

AMPLIFIER

Reach Compliance Code :

Compliant

Case Connection :

SOURCE

JESD-30 Code :

R-PDSO-G4

Highest Frequency Band :

X BAND

HTS Code :

8541.21.00.75

JESD-609 Code :

e3

Configuration :

Single

Subcategory :

FET RF Small Signals

Operating Mode :

Depletion Mode

Terminal Position :

Dual

Power Gain-Min (Gp) :

13.5 dB

Transistor Element Material :

GALLIUM ARSENIDE

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-Channel

FET Technology :

HIGH ELECTRON MOBILITY

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Terminal Form :

Gull wing