ATF-33143-TR2G

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Gain :

15dB

Published :

2005

FET Technology :

HIGH ELECTRON MOBILITY

Peak Reflow Temperature (Cel) :

260

Operating Mode :

Depletion Mode

Drain to Source Voltage (Vdss) :

5.5V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

JESD-609 Code :

e3

Lead Free :

Lead Free

Configuration :

Single

Package / Case :

SC-82A, SOT-343

Qualification Status :

Not Qualified

Voltage - Test :

4V

Case Connection :

SOURCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW NOISE

Voltage - Rated DC :

5.5V

Power - Output :

22dBm

Transistor Application :

AMPLIFIER

Current - Test :

80mA

Number of Elements :

1

Factory Lead Time :

6 Weeks

Noise Figure :

0.5dB

Contact Plating :

Tin

Min Operating Temperature :

-65°C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

600mW

Polarity/Channel Type :

N-Channel

RoHS Status :

RoHS Compliant

Transistor Type :

pHEMT FET

Number of Terminations :

4

Continuous Drain Current (ID) :

305mA

Max Operating Temperature :

160°C

Frequency :

2GHz

Terminal Position :

Dual

Number of Pins :

4

Current Rating :

305mA

Gate to Source Voltage (Vgs) :

-5V

Mount :

Surface Mount