ATF-551M4-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Base Part Number :

ATF-551M4

Power Dissipation :

270mW

Terminal Position :

BOTTOM

Gate to Source Voltage (Vgs) :

1V

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

100mA

Max Operating Temperature :

150°C

Number of Pins :

4

Package / Case :

0505 (1412 Metric)

Transistor Type :

pHEMT FET

Noise Figure :

0.5dB

Max Power Dissipation :

270mW

Factory Lead Time :

7 Weeks

Voltage - Rated DC :

2.7V

Published :

2003

Gain :

17.5dB

Radiation Hardening :

No

FET Technology :

HIGH ELECTRON MOBILITY

Nominal Supply Current :

10mA

Number of Elements :

1

Number of Terminations :

4

ECCN Code :

EAR99

Operating Mode :

Depletion Mode

DS Breakdown Voltage-Min :

5V

Drain to Source Voltage (Vdss) :

2.7V

Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Frequency :

2GHz

Current Rating :

100mA

Mount :

Surface Mount

Transistor Application :

AMPLIFIER

Min Operating Temperature :

-65°C

Terminal Finish :

Gold (Au)

Packaging :

Bulk

Power - Output :

14.6dBm

Drain Current-Max (Abs) (ID) :

0.1A

JESD-609 Code :

e4

Polarity/Channel Type :

N-Channel