ATF-541M4-TR2

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Number of Terminations :

4

Drain to Source Voltage (Vdss) :

3V

Gain :

17.5dB

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

5V

Max Power Dissipation :

360mW

Published :

2013

Transistor Type :

pHEMT FET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Noise Figure :

0.5dB

Number of Elements :

1

JESD-609 Code :

e4

Transistor Application :

AMPLIFIER

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Mount :

Surface Mount

Power Dissipation :

360mW

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

1V

Base Part Number :

ATF-541M4

Terminal Finish :

Gold

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

7 Weeks

Min Operating Temperature :

-65°C

Voltage - Rated DC :

3V

Number of Pins :

4

Lead Free :

Lead Free

Terminal Position :

BOTTOM

Package / Case :

0505 (1412 Metric)

Configuration :

Single

Additional Feature :

LOW NOISE

Current - Test :

60mA

Continuous Drain Current (ID) :

120mA

Frequency :

2GHz

Power - Output :

21.4dBm

Current Rating :

120mA

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

NO LEAD

Drain Current-Max (Abs) (ID) :

0.12A

FET Technology :

HIGH ELECTRON MOBILITY

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified