ATF-521P8-TR1

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Power - Output :

26.5dBm

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

Power Dissipation :

1.5W

Radiation Hardening :

No

Current - Test :

200mA

Drain Current-Max (Abs) (ID) :

0.5A

JESD-609 Code :

e3

Noise Figure :

1.5dB

Continuous Drain Current (ID) :

500mA

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.5W

Voltage - Rated DC :

4.5V

Configuration :

Single

RoHS Status :

RoHS Compliant

Case Connection :

SOURCE

FET Technology :

HIGH ELECTRON MOBILITY

Min Operating Temperature :

-65°C

Gate to Source Voltage (Vgs) :

1V

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Transistor Type :

pHEMT FET

Package / Case :

8-WFDFN Exposed Pad

Frequency :

2GHz

DS Breakdown Voltage-Min :

7V

Number of Terminations :

8

JEDEC-95 Code :

MO-229

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Gain :

17dB

Drain to Source Voltage (Vdss) :

7V

Published :

2014

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Max Operating Temperature :

150°C

Current Rating :

500mA

Terminal Position :

Dual