ATF-521P8-TR1

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

JEDEC-95 Code :

MO-229

Case Connection :

SOURCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.5A

Power Dissipation :

1.5W

Noise Figure :

1.5dB

Min Operating Temperature :

-65°C

RoHS Status :

RoHS Compliant

Gain :

17dB

Peak Reflow Temperature (Cel) :

260

Current - Test :

200mA

ECCN Code :

EAR99

Number of Pins :

8

Polarity/Channel Type :

N-Channel

Current Rating :

500mA

Number of Elements :

1

Max Power Dissipation :

1.5W

Number of Terminations :

8

Transistor Type :

pHEMT FET

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Continuous Drain Current (ID) :

500mA

Published :

2014

Max Operating Temperature :

150°C

Frequency :

2GHz

Power - Output :

26.5dBm

Configuration :

Single

Radiation Hardening :

No

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

7V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Package / Case :

8-WFDFN Exposed Pad

Factory Lead Time :

12 Weeks

Drain to Source Voltage (Vdss) :

7V

Voltage - Rated DC :

4.5V

Terminal Finish :

Matte Tin (Sn)

FET Technology :

HIGH ELECTRON MOBILITY

Gate to Source Voltage (Vgs) :

1V