ATF-521P8-TR1

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Packaging :

Tape and Reel (TR)

Frequency :

2GHz

Lead Free :

Lead Free

Noise Figure :

1.5dB

Polarity/Channel Type :

N-Channel

Number of Terminations :

8

JEDEC-95 Code :

MO-229

Power - Output :

26.5dBm

Case Connection :

SOURCE

Number of Pins :

8

JESD-609 Code :

e3

Power Dissipation :

1.5W

Min Operating Temperature :

-65°C

Number of Elements :

1

Current - Test :

200mA

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Terminal Position :

Dual

Package / Case :

8-WFDFN Exposed Pad

DS Breakdown Voltage-Min :

7V

FET Technology :

HIGH ELECTRON MOBILITY

Voltage - Rated DC :

4.5V

Max Operating Temperature :

150°C

Max Power Dissipation :

1.5W

Radiation Hardening :

No

Configuration :

Single

Transistor Application :

AMPLIFIER

Published :

2014

Drain to Source Voltage (Vdss) :

7V

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

0.5A

Current Rating :

500mA

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Continuous Drain Current (ID) :

500mA

Transistor Type :

pHEMT FET

Gain :

17dB

RoHS Status :

RoHS Compliant