ATF-521P8-TR1

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Voltage (Vdss) :

7V

JEDEC-95 Code :

MO-229

Noise Figure :

1.5dB

Power Dissipation :

1.5W

Number of Elements :

1

Package / Case :

8-WFDFN Exposed Pad

RoHS Status :

RoHS Compliant

Transistor Application :

AMPLIFIER

Number of Terminations :

8

Configuration :

Single

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Power - Output :

26.5dBm

Current Rating :

500mA

Voltage - Rated DC :

4.5V

Continuous Drain Current (ID) :

500mA

Lead Free :

Lead Free

Case Connection :

SOURCE

Number of Pins :

8

Factory Lead Time :

12 Weeks

Published :

2014

Mount :

Surface Mount

FET Technology :

HIGH ELECTRON MOBILITY

Gain :

17dB

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Max Operating Temperature :

150°C

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

7V

Current - Test :

200mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.5W

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

1V

Frequency :

2GHz

Min Operating Temperature :

-65°C

Transistor Type :

pHEMT FET

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

0.5A

Radiation Hardening :

No