ATF-521P8-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.5W

Power - Output :

26.5dBm

Case Connection :

SOURCE

Polarity/Channel Type :

N-Channel

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

HIGH ELECTRON MOBILITY

Drain Current-Max (Abs) (ID) :

0.5A

Dual Supply Voltage :

4.5V

Voltage - Rated DC :

4.5V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Frequency :

2GHz

Min Operating Temperature :

-65°C

Current - Test :

200mA

Published :

2014

Drain to Source Voltage (Vdss) :

4.5V

Noise Figure :

1.5dB

JESD-609 Code :

e3

Nominal Vgs :

280 mV

Termination :

SMD/SMT

Transistor Type :

pHEMT FET

Max Power Dissipation :

1.5W

Number of Pins :

8

Factory Lead Time :

12 Weeks

Transistor Application :

AMPLIFIER

Gate to Source Voltage (Vgs) :

1V

ECCN Code :

EAR99

Terminal Position :

Dual

Max Operating Temperature :

150°C

Packaging :

Bulk

Continuous Drain Current (ID) :

500mA

DS Breakdown Voltage-Min :

7V

JEDEC-95 Code :

MO-229

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Package / Case :

8-WFDFN Exposed Pad

Gain :

17dB

Lead Free :

Lead Free

Contact Plating :

Tin

Current Rating :

500mA

REACH SVHC :

No SVHC

Number of Elements :

1

Configuration :

Single