ATF-52189-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

FET Technology :

HIGH ELECTRON MOBILITY

Gain :

16dB

Power Dissipation :

1.5W

Terminal Form :

Flat

Published :

2001

Case Connection :

SOURCE

DS Breakdown Voltage-Min :

7V

Termination :

SMD/SMT

Mount :

Surface Mount

Nominal Vgs :

280 mV

Radiation Hardening :

No

Noise Figure :

1.5dB

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-65°C

Time@Peak Reflow Temperature-Max (s) :

40

Power - Output :

27dBm

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

7V

Dual Supply Voltage :

4.5V

Max Power Dissipation :

1.5W

Contact Plating :

Tin

Package / Case :

TO-243AA

JESD-609 Code :

e3

Number of Pins :

4

Factory Lead Time :

16 Weeks

Voltage - Rated DC :

4.5V

Frequency :

2GHz

Current Rating :

500mA

Gate to Source Voltage (Vgs) :

1V

Continuous Drain Current (ID) :

500mA

Configuration :

Single

RoHS Status :

RoHS Compliant

Terminal Position :

Single

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Transistor Application :

AMPLIFIER

Drain Current-Max (Abs) (ID) :

0.3A

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Nominal Supply Current :

200mA

Number of Elements :

1

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-F3

Transistor Type :

E-pHEMT

Packaging :

Strip

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE