ATF-511P8-TR2

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOW NOISE

Gain :

14.8dB

Published :

2014

Power - Output :

30dBm

Package / Case :

8-WFDFN Exposed Pad

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

1A

Transistor Type :

E-pHEMT

Max Power Dissipation :

3W

Case Connection :

SOURCE

Mount :

Surface Mount

Terminal Position :

Dual

Number of Elements :

1

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Power Dissipation :

3W

Frequency :

2GHz

Contact Plating :

Tin

Min Operating Temperature :

-65°C

Current - Test :

200mA

Number of Pins :

8

Gate to Source Voltage (Vgs) :

1V

FET Technology :

HIGH ELECTRON MOBILITY

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Current Rating :

1A

Noise Figure :

1.4dB

Drain to Source Voltage (Vdss) :

4.5V

DS Breakdown Voltage-Min :

7V

Terminal Form :

NO LEAD

JESD-609 Code :

e3

Number of Terminations :

8

Transistor Application :

AMPLIFIER

Continuous Drain Current (ID) :

1A

Voltage - Rated DC :

4.5V

Factory Lead Time :

6 Weeks