ATF-511P8-TR2

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Peak Reflow Temperature (Cel) :

260

Power - Output :

30dBm

Polarity/Channel Type :

N-Channel

Current - Test :

200mA

Drain Current-Max (Abs) (ID) :

1A

Drain to Source Voltage (Vdss) :

4.5V

ECCN Code :

EAR99

Frequency :

2GHz

Current Rating :

1A

Min Operating Temperature :

-65°C

Power Dissipation :

3W

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Case Connection :

SOURCE

DS Breakdown Voltage-Min :

7V

Transistor Type :

E-pHEMT

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

3W

Terminal Form :

NO LEAD

Noise Figure :

1.4dB

Terminal Position :

Dual

Published :

2014

Continuous Drain Current (ID) :

1A

Package / Case :

8-WFDFN Exposed Pad

Max Operating Temperature :

150°C

Mount :

Surface Mount

Gain :

14.8dB

Factory Lead Time :

6 Weeks

Contact Plating :

Tin

Qualification Status :

Not Qualified

FET Technology :

HIGH ELECTRON MOBILITY

Voltage - Rated DC :

4.5V

Configuration :

Single

Additional Feature :

LOW NOISE

Transistor Application :

AMPLIFIER

Number of Terminations :

8

Number of Pins :

8

Number of Elements :

1

Gate to Source Voltage (Vgs) :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)