ATF-511P8-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Mode :

ENHANCEMENT MODE

Frequency :

2GHz

Number of Terminations :

8

Dual Supply Voltage :

4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

8

Min Operating Temperature :

-65°C

Current Rating :

1A

Voltage - Rated DC :

4.5V

Length :

2.1mm

Drain to Source Voltage (Vdss) :

4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Nominal Vgs :

280 mV

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

1V

Drain Current-Max (Abs) (ID) :

1A

Package / Case :

8-WFDFN Exposed Pad

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Configuration :

Single

Terminal Form :

NO LEAD

DS Breakdown Voltage-Min :

7V

Current - Test :

200mA

Height :

800μm

Noise Figure :

1.4dB

Mount :

Surface Mount

Continuous Drain Current (ID) :

1A

Additional Feature :

LOW NOISE

Max Operating Temperature :

150°C

FET Technology :

HIGH ELECTRON MOBILITY

Width :

2.1mm

ECCN Code :

EAR99

Gain :

14.8dB

Case Connection :

SOURCE

RoHS Status :

RoHS Compliant

Power Dissipation :

3W

Max Power Dissipation :

3W

Power - Output :

30dBm

Termination :

SMD/SMT

Factory Lead Time :

6 Weeks

Terminal Position :

Dual

Published :

2012

Transistor Type :

E-pHEMT

Number of Elements :

1

Lead Free :

Lead Free