ATF-511P8-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

4.5V

DS Breakdown Voltage-Min :

7V

Current - Test :

200mA

Length :

2.1mm

Published :

2012

Power Dissipation :

3W

Dual Supply Voltage :

4.5V

Factory Lead Time :

6 Weeks

Mount :

Surface Mount

Additional Feature :

LOW NOISE

Continuous Drain Current (ID) :

1A

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-WFDFN Exposed Pad

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Height :

800μm

Max Operating Temperature :

150°C

Current Rating :

1A

Termination :

SMD/SMT

Terminal Position :

Dual

Transistor Type :

E-pHEMT

Case Connection :

SOURCE

Nominal Vgs :

280 mV

FET Technology :

HIGH ELECTRON MOBILITY

Packaging :

Bulk

Frequency :

2GHz

Contact Plating :

Tin

Min Operating Temperature :

-65°C

Drain Current-Max (Abs) (ID) :

1A

Power - Output :

30dBm

Gain :

14.8dB

Width :

2.1mm

Voltage - Rated DC :

4.5V

Transistor Application :

AMPLIFIER

Max Power Dissipation :

3W

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

1V

RoHS Status :

RoHS Compliant

Terminal Form :

NO LEAD

Polarity/Channel Type :

N-Channel

Configuration :

Single

JESD-609 Code :

e3

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Noise Figure :

1.4dB

Number of Pins :

8

Number of Terminations :

8

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)