ATF-511P8-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Power - Output :

30dBm

Number of Terminations :

8

Height :

800μm

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

4.5V

REACH SVHC :

No SVHC

Length :

2.1mm

Drain Current-Max (Abs) (ID) :

1A

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Termination :

SMD/SMT

Noise Figure :

1.4dB

Transistor Type :

E-pHEMT

Published :

2012

Peak Reflow Temperature (Cel) :

260

Width :

2.1mm

Qualification Status :

Not Qualified

Contact Plating :

Tin

Current Rating :

1A

RoHS Status :

RoHS Compliant

Power Dissipation :

3W

Case Connection :

SOURCE

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

7V

JESD-609 Code :

e3

Packaging :

Bulk

Terminal Form :

NO LEAD

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Nominal Vgs :

280 mV

Continuous Drain Current (ID) :

1A

Current - Test :

200mA

Transistor Application :

AMPLIFIER

Min Operating Temperature :

-65°C

Gain :

14.8dB

Package / Case :

8-WFDFN Exposed Pad

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Voltage - Rated DC :

4.5V

Additional Feature :

LOW NOISE

Polarity/Channel Type :

N-Channel

Dual Supply Voltage :

4.5V

Gate to Source Voltage (Vgs) :

1V

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Max Power Dissipation :

3W

Configuration :

Single

Frequency :

2GHz

FET Technology :

HIGH ELECTRON MOBILITY