ATF-511P8-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Noise Figure :

1.4dB

Voltage - Rated DC :

4.5V

Drain Current-Max (Abs) (ID) :

1A

DS Breakdown Voltage-Min :

7V

Max Operating Temperature :

150°C

Nominal Vgs :

280 mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

NO LEAD

Termination :

SMD/SMT

Transistor Application :

AMPLIFIER

Width :

2.1mm

Published :

2012

Continuous Drain Current (ID) :

1A

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Frequency :

2GHz

Min Operating Temperature :

-65°C

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Current - Test :

200mA

Length :

2.1mm

Power - Output :

30dBm

Lead Free :

Lead Free

FET Technology :

HIGH ELECTRON MOBILITY

Contact Plating :

Tin

Factory Lead Time :

6 Weeks

Gain :

14.8dB

Height :

800μm

Drain to Source Voltage (Vdss) :

4.5V

Number of Terminations :

8

Configuration :

Single

Current Rating :

1A

Max Power Dissipation :

3W

Additional Feature :

LOW NOISE

ECCN Code :

EAR99

Case Connection :

SOURCE

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Transistor Type :

E-pHEMT

Package / Case :

8-WFDFN Exposed Pad

Number of Pins :

8

Dual Supply Voltage :

4.5V

Packaging :

Bulk

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

1V

Power Dissipation :

3W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED