ATF-511P8-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

FET Technology :

HIGH ELECTRON MOBILITY

Current Rating :

1A

Factory Lead Time :

6 Weeks

Gain :

14.8dB

Nominal Vgs :

280 mV

Case Connection :

SOURCE

Drain to Source Voltage (Vdss) :

4.5V

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

1A

Gate to Source Voltage (Vgs) :

1V

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Min Operating Temperature :

-65°C

Additional Feature :

LOW NOISE

Length :

2.1mm

Number of Terminations :

8

JESD-609 Code :

e3

Noise Figure :

1.4dB

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-WFDFN Exposed Pad

Qualification Status :

Not Qualified

Terminal Position :

Dual

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

3W

Voltage - Rated DC :

4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Dual Supply Voltage :

4.5V

Transistor Application :

AMPLIFIER

Height :

800μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

1A

Lead Free :

Lead Free

Contact Plating :

Tin

Polarity/Channel Type :

N-Channel

Power Dissipation :

3W

Frequency :

2GHz

Number of Elements :

1

Termination :

SMD/SMT

DS Breakdown Voltage-Min :

7V

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Published :

2012

Power - Output :

30dBm

Width :

2.1mm

Current - Test :

200mA

Transistor Type :

E-pHEMT

Number of Pins :

8

Packaging :

Bulk