APT8M80K

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

225W Tc

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Turn On Delay Time :

8 ns

Drain Current-Max (Abs) (ID) :

45A

Vgs(th) (Max) @ Id :

5V @ 500µA

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Mount :

Through Hole

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

285 mJ

Turn-Off Delay Time :

33 ns

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1335pF @ 25V

Length :

10.26mm

Pin Count :

3

Packaging :

Tube

Drain to Source Breakdown Voltage :

800V

Published :

2009

Series :

POWER MOS 8™

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

800V

Current Rating :

8A

Rise Time :

11ns

FET Type :

N-Channel

Weight :

6.000006g

Mounting Type :

Through Hole

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

8A

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Power Dissipation :

225W

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

25A

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 4A, 10V

Configuration :

Single

Number of Terminations :

3

JESD-609 Code :

e1

Fall Time (Typ) :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Radiation Hardening :

No

Height :

9.19mm

Width :

4.72mm