APT8M100B
- Mfr.Part #
- APT8M100B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 8A TO247
- Stock
- 10,764
- In Stock :
- 10,764
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- TIN SILVER COPPER
- Current Rating :
- 8A
- Weight :
- 38.000013g
- JEDEC-95 Code :
- TO-247AB
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 5.31mm
- Packaging :
- Tube
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- Length :
- 21.46mm
- Package / Case :
- TO-247-3
- Rds On (Max) @ Id, Vgs :
- 1.8 Ω @ 4A, 10V
- Turn-Off Delay Time :
- 29 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1885pF @ 25V
- Power Dissipation :
- 290W
- Number of Terminations :
- 3
- Turn On Delay Time :
- 8.5 ns
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Additional Feature :
- FAST SWITCHING, AVALANCHE RATED
- Continuous Drain Current (ID) :
- 8A
- Terminal Position :
- Single
- Published :
- 1997
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 1kV
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 7.3A
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 1000V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 290W Tc
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 7.8ns
- Pulsed Drain Current-Max (IDM) :
- 27A
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 7.2 ns
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Factory Lead Time :
- 23 Weeks
- Width :
- 16.26mm
- Datasheets
- APT8M100B

N-Channel Tube 1.8 Ω @ 4A, 10V ±30V 1885pF @ 25V 60nC @ 10V 1000V TO-247-3
APT8M100B Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1885pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 7.3A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 29 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 27A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
APT8M100B Features
a continuous drain current (ID) of 8A
the turn-off delay time is 29 ns
based on its rated peak drain current 27A.
a 1000V drain to source voltage (Vdss)
APT8M100B Applications
There are a lot of Microsemi Corporation
APT8M100B applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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