APT80F60J
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- Mfr.Part #
- APT80F60J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 84A ISOTOP
- Stock
- 42,023
- In Stock ：
- 42,023
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Series :
- POWER MOS 8™
- Package / Case :
- SOT-227-4, miniBLOC
- Packaging :
- Tube
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 134 ns
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 600V
- Power Dissipation-Max :
- 961W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Chassis Mount, Screw
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 600V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- UNSPECIFIED
- Turn-Off Delay Time :
- 408 ns
- Avalanche Energy Rating (Eas) :
- 3352 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pin Count :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 23994pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 598nC @ 10V
- Terminal Position :
- UPPER
- Factory Lead Time :
- 14 Weeks
- Mounting Type :
- Chassis Mount
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 60A, 10V
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Pbfree Code :
- yes
- Published :
- 1997
- Current - Continuous Drain (Id) @ 25°C :
- 84A Tc
- Fall Time (Typ) :
- 123 ns
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 84A
- Radiation Hardening :
- No
- Case Connection :
- Isolated
- Drain-source On Resistance-Max :
- 0.055Ohm
- Rise Time :
- 156ns
- Datasheets
- APT80F60J
N-Channel Tube 55m Ω @ 60A, 10V ±30V 23994pF @ 25V 598nC @ 10V 600V SOT-227-4, miniBLOC
APT80F60J Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3352 mJ.The maximum input capacitance of this device is 23994pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 84A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 408 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 134 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
APT80F60J Features
the avalanche energy rating (Eas) is 3352 mJ
a continuous drain current (ID) of 84A
the turn-off delay time is 408 ns
a 600V drain to source voltage (Vdss)
APT80F60J Applications
There are a lot of Microsemi Corporation
APT80F60J applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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