APT8024LLLG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Pin Count :

3

Avalanche Energy Rating (Eas) :

2500 mJ

Lead Free :

Lead Free

Continuous Drain Current (ID) :

31A

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Current Rating :

31A

Number of Elements :

1

Voltage - Rated DC :

800V

Radiation Hardening :

No

Packaging :

Tube

Case Connection :

DRAIN

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

240m Ω @ 15.5A, 10V

Mounting Type :

Through Hole

Series :

POWER MOS 7®

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

9 ns

Input Capacitance (Ciss) (Max) @ Vds :

4670pF @ 25V

Package / Case :

TO-264-3, TO-264AA

Terminal Finish :

TIN SILVER COPPER

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Mount :

Through Hole

JESD-609 Code :

e1

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

565W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

4 ns

Power Dissipation-Max :

565W Tc

Number of Terminations :

3

Turn-Off Delay Time :

23 ns

Rise Time :

5ns

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Drain-source On Resistance-Max :

0.24Ohm