AO8810

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

7A

FET Feature :

Logic Level Gate

Number of Elements :

2

Max Power Dissipation :

1.5W

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

7A

Terminal Form :

Gull wing

FET Type :

2 N-Channel (Dual) Common Drain

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

8

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Drain-source On Resistance-Max :

0.0205Ohm

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1295pF @ 10V

Published :

2005

Rds On (Max) @ Id, Vgs :

20m Ω @ 7A, 4.5V

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Number of Pins :

8

Mount :

Surface Mount

Power - Max :

1.5W

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE