ALD114913PAL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

8 Weeks

Drain to Source Resistance :

500Ohm

Rds On (Max) @ Id, Vgs :

500Ohm @ 2.7V

Max Power Dissipation :

500mW

Mounting Type :

Through Hole

FET Feature :

Depletion Mode

Operating Temperature :

0°C~70°C TJ

Published :

2005

Number of Pins :

8

Element Configuration :

Dual

Power - Max :

500mW

Mount :

Through Hole

Drain to Source Breakdown Voltage :

10V

Min Operating Temperature :

0°C

Turn-Off Delay Time :

10 ns

Supplier Device Package :

8-PDIP

Continuous Drain Current (ID) :

3mA

Input Capacitance :

2.5pF

Vgs(th) (Max) @ Id :

1.26V @ 1μA

Series :

EPAD®

FET Type :

2 N-Channel (Dual) Matched Pair

Current - Continuous Drain (Id) @ 25°C :

12mA 3mA

Input Capacitance (Ciss) (Max) @ Vds :

2.5pF @ 5V

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

70°C

Rds On Max :

500 Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

10.6V

Power Dissipation :

500mW

Package / Case :

8-DIP (0.300, 7.62mm)

Packaging :

Tube

Drain to Source Voltage (Vdss) :

10.6V