ALD111933MAL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

10V

Factory Lead Time :

10 Weeks

RoHS Status :

RoHS Compliant

FET Feature :

Standard

Transistor Application :

SWITCHING

Number of Elements :

2

Operating Temperature :

0°C~70°C TJ

Element Configuration :

Dual

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2.5pF @ 5V

Continuous Drain Current (ID) :

6.9mA

Gate to Source Voltage (Vgs) :

10.6V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Mount :

Surface Mount

FET Type :

2 N-Channel (Dual) Matched Pair

Series :

EPAD®

Vgs(th) (Max) @ Id :

3.35V @ 1μA

Published :

2006

Number of Terminations :

8

Power Dissipation :

500mW

Turn-Off Delay Time :

10 ns

JESD-30 Code :

R-PDSO-G8

Terminal Form :

Gull wing

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Max Power Dissipation :

500mW

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

500 Ω @ 5.9V