ALD1117PAL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

10.6V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

-13.2V

Package / Case :

8-DIP (0.300, 7.62mm)

Input Capacitance (Ciss) (Max) @ Vds :

3pF @ 5V

Pbfree Code :

yes

FET Feature :

Standard

Continuous Drain Current (ID) :

2mA

Transistor Element Material :

SILICON

Configuration :

COMMON SUBSTRATE, 2 ELEMENTS

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-12V

Factory Lead Time :

8 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Published :

2005

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Packaging :

Tube

Power Dissipation :

500mW

Rds On (Max) @ Id, Vgs :

1800 Ω @ 5V

Max Power Dissipation :

500mW

ECCN Code :

EAR99

Number of Elements :

2

Vgs(th) (Max) @ Id :

1V @ 1μA

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

0°C~70°C TJ

FET Type :

2 P-Channel (Dual) Matched Pair

Number of Terminations :

8