ALD1115SAL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

0°C~70°C TJ

FET Feature :

Standard

Max Power Dissipation :

500mW

Vgs(th) (Max) @ Id :

1V @ 1μA

Pbfree Code :

yes

Number of Terminations :

8

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Elements :

2

Published :

2006

Rds On (Max) @ Id, Vgs :

1800 Ω @ 5V

Power Dissipation :

500mW

Transistor Application :

SWITCHING

Element Configuration :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Number of Pins :

8

Drain to Source Voltage (Vdss) :

10.6V

Factory Lead Time :

8 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

500Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3pF @ 5V

Continuous Drain Current (ID) :

-2mA

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

13.2V

Mount :

Surface Mount

ECCN Code :

EAR99

FET Type :

N and P-Channel Complementary