ALD110908APAL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Turn-Off Delay Time :

10 ns

Drain to Source Voltage (Vdss) :

10.6V

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

2.5pF @ 5V

Power - Max :

500mW

Rds On (Max) @ Id, Vgs :

500Ohm @ 4.8V

RoHS Status :

ROHS3 Compliant

Input Capacitance :

2.5pF

Max Power Dissipation :

500mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3mA

Factory Lead Time :

8 Weeks

Power Dissipation :

500mW

Series :

EPAD®

Drain to Source Resistance :

500Ohm

Max Operating Temperature :

70°C

Package / Case :

8-DIP (0.300, 7.62mm)

Current - Continuous Drain (Id) @ 25°C :

12mA 3mA

Element Configuration :

Dual

FET Feature :

Standard

Gate to Source Voltage (Vgs) :

10.6V

Vgs(th) (Max) @ Id :

810mV @ 1μA

FET Type :

2 N-Channel (Dual) Matched Pair

Drain to Source Breakdown Voltage :

10V

Rds On Max :

500 Ω

Operating Temperature :

0°C~70°C TJ

Mounting Type :

Through Hole

Supplier Device Package :

8-PDIP

Packaging :

Tube

Mount :

Through Hole

Min Operating Temperature :

0°C