2STN2360

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

60V

Gain Bandwidth Product :

130MHz

Contact Plating :

Tin

Lead Free :

Lead Free

ECCN Code :

EAR99

Base Part Number :

2STN

Power Dissipation :

1.6W

Radiation Hardening :

No

Transition Frequency :

130MHz

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Width :

3.5mm

Collector Base Voltage (VCBO) :

60V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 1A 2V

Current - Collector Cutoff (Max) :

100nA ICBO

Length :

6.5mm

Pin Count :

3

Polarity/Channel Type :

PNP

Number of Pins :

4

Number of Terminations :

4

Terminal Form :

Gull wing

Max Breakdown Voltage :

60V

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

60V

JESD-609 Code :

e3

Max Collector Current :

3A

Collector Emitter Saturation Voltage :

500mV

Terminal Position :

Dual

Pbfree Code :

yes

Frequency :

130MHz

hFE Min :

80

Emitter Base Voltage (VEBO) :

6V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-261-4, TO-261AA

Height :

1.8mm

Number of Elements :

1

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 150mA, 3A

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP

Max Power Dissipation :

1.6W

Transistor Element Material :

SILICON