2STN1360
- Mfr.Part #
- 2STN1360
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A SOT223
- Stock
- 6,859
- In Stock :
- 6,859
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2STN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 60V
- Current Rating :
- 3A
- Power Dissipation :
- 1.6W
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time :
- 8 Weeks
- Length :
- 6.5mm
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- hFE Min :
- 80
- Terminal Position :
- Dual
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1.6W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PDSO-G4
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Transition Frequency :
- 130MHz
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Height :
- 1.8mm
- Frequency :
- 130MHz
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 500mV
- Gain Bandwidth Product :
- 130MHz
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.5mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Rated DC :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 150mA, 3A
- Contact Plating :
- Tin
- Number of Terminations :
- 4
- Max Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Max Collector Current :
- 3A
- Lead Free :
- Lead Free
- Datasheets
- 2STN1360
2STN1360 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
2STN1360 Overview
This device has a DC current gain of 160 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 130MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 3A volts.
2STN1360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 130MHz
2STN1360 Applications
There are a lot of STMicroelectronics
2STN1360 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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