2STN1360

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

REACH SVHC :

No SVHC

Height :

1.8mm

Length :

6.5mm

Transistor Application :

SWITCHING

hFE Min :

80

Package / Case :

TO-261-4, TO-261AA

Current Rating :

3A

Transition Frequency :

130MHz

Gain Bandwidth Product :

130MHz

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 1A 2V

Power Dissipation :

1.6W

JESD-30 Code :

R-PDSO-G4

Transistor Type :

NPN

Pin Count :

4

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Number of Elements :

1

Collector Emitter Saturation Voltage :

500mV

Voltage - Rated DC :

80V

Base Part Number :

2STN

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

6V

Element Configuration :

Single

Terminal Form :

Gull wing

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Frequency :

130MHz

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

80V

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Mount :

Surface Mount

JESD-609 Code :

e3

Max Power Dissipation :

1.6W

Collector Emitter Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Max Breakdown Voltage :

60V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 150mA, 3A

Max Collector Current :

3A

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

60V

Time@Peak Reflow Temperature-Max (s) :

30

Width :

3.5mm

Operating Temperature :

150°C TJ