2STN1550
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- Mfr.Part #
- 2STN1550
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 5A SOT223
- Stock
- 53
- In Stock ：
- 53
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.6W
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- 5A
- JESD-609 Code :
- e3
- Power Dissipation :
- 1.6W
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 300mA, 3A
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PDSO-G4
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Base Part Number :
- 2STN
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 135 @ 2A 2V
- Datasheets
- 2STN1550
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
2STN1550 Overview
This device has a DC current gain of 135 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 450mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A breakdown input voltage of 50V volts can be used.A maximum collector current of 5A volts is possible.
2STN1550 Features
the DC current gain for this device is 135 @ 2A 2V
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at 5V
2STN1550 Applications
There are a lot of STMicroelectronics
2STN1550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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