2SCR554PT100
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- Mfr.Part #
- 2SCR554PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.5A MPT3
- Stock
- 2,075
- In Stock ：
- 2,075
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Transition Frequency :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- 2SCR554
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Configuration :
- Single
- Pbfree Code :
- yes
- Contact Plating :
- Copper, Tin
- Continuous Collector Current :
- 1.5A
- ECCN Code :
- EAR99
- Max Collector Current :
- 1.5A
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Power Dissipation :
- 2W
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Max Frequency :
- 300MHz
- JESD-609 Code :
- e2
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 25mA, 500mA
- Max Power Dissipation :
- 2W
- hFE Min :
- 120
- Max Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Terminal Finish :
- TIN COPPER
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pin Count :
- 3
- Published :
- 2013
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Number of Elements :
- 1
- Datasheets
- 2SCR554PT100
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SCR554PT100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.When VCE saturation is 300mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1.5A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
2SCR554PT100 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
2SCR554PT100 Applications
There are a lot of ROHM Semiconductor
2SCR554PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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