2SCR523UBTL
- Mfr.Part #
- 2SCR523UBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A UMT3F
- Stock
- 12,000
- In Stock :
- 12,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 200mW
- Package / Case :
- SC-85
- Number of Pins :
- 85
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 200mA
- Transistor Type :
- NPN
- Transition Frequency :
- 350MHz
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 100mV
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Terminal Form :
- Flat
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 120
- Published :
- 2010
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 50V
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PDSO-F3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 13 Weeks
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Gain Bandwidth Product :
- 350MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Mount :
- Surface Mount
- Datasheets
- 2SCR523UBTL

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-85 Tape & Reel (TR) Surface Mount
2SCR523UBTL Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.350MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
2SCR523UBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SCR523UBTL Applications
There are a lot of ROHM Semiconductor
2SCR523UBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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