2SCR523EBTL
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- Mfr.Part #
- 2SCR523EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A EMT3F
- Stock
- 106,904
- In Stock ：
- 106,904
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 350MHz
- Transistor Type :
- NPN
- Package / Case :
- SC-89, SOT-490
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Form :
- Flat
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 13 Weeks
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Power - Max :
- 150mW
- Max Power Dissipation :
- 150mW
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Transition Frequency :
- 350MHz
- Published :
- 2010
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 100mV
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Breakdown Voltage :
- 50V
- HTS Code :
- 8541.21.00.75
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Element Material :
- SILICON
- Datasheets
- 2SCR523EBTL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SCR523EBTL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 350MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
2SCR523EBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SCR523EBTL Applications
There are a lot of ROHM Semiconductor
2SCR523EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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