2SCR522MT2L
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- Mfr.Part #
- 2SCR522MT2L
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.2A VMT3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 400MHz
- Collector Base Voltage (VCBO) :
- 20V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PDSO-F3
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Form :
- Flat
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 120mV
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Continuous Collector Current :
- 200mA
- Max Collector Current :
- 200mA
- hFE Min :
- 120
- Published :
- 2015
- Max Breakdown Voltage :
- 20V
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-723
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e2
- Max Power Dissipation :
- 150mW
- Gain Bandwidth Product :
- 400MHz
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SCR522MT2L
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SCR522MT2L Overview
In this device, the DC current gain is 120 @ 1mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 120mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.400MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
2SCR522MT2L Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
2SCR522MT2L Applications
There are a lot of ROHM Semiconductor
2SCR522MT2L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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