2SCR514PT100
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- Mfr.Part #
- 2SCR514PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.7A MPT3
- Stock
- 150
- In Stock ：
- 150
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e2
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2W
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Max Frequency :
- 320MHz
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 15mA, 300mA
- Terminal Form :
- Flat
- Transistor Type :
- NPN
- Pin Count :
- 3
- Max Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 700mA
- Continuous Collector Current :
- 700mA
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- TIN COPPER
- Transition Frequency :
- 320MHz
- hFE Min :
- 120
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Contact Plating :
- Copper, Tin
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-243AA
- Reach Compliance Code :
- not_compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Terminal Position :
- Single
- Max Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- 2SCR514
- Datasheets
- 2SCR514PT100
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SCR514PT100 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 700mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 320MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 700mA volts.
2SCR514PT100 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 15mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
2SCR514PT100 Applications
There are a lot of ROHM Semiconductor
2SCR514PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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