2SC6097-E

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Mfr.Part #
2SC6097-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 60V 3A TP
Stock
36,434
In Stock :
36,434

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Polarity/Channel Type :
NPN
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
3A
Transistor Type :
NPN
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
60V
Current - Collector Cutoff (Max) :
1μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 100mA 2V
Emitter Base Voltage (VEBO) :
6.5V
JESD-609 Code :
e6
Terminal Position :
Single
Terminal Finish :
Tin/Bismuth (Sn/Bi)
hFE Min :
300
Frequency - Transition :
390MHz
Published :
2012
Number of Elements :
1
Lead Free :
Lead Free
Pbfree Code :
yes
Packaging :
Bulk
Case Connection :
COLLECTOR
Pin Count :
3
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
60V
Configuration :
Single
Factory Lead Time :
2 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Number of Terminations :
3
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
100V
Vce Saturation (Max) @ Ib, Ic :
135mV @ 100mA, 1A
Number of Pins :
3
Max Power Dissipation :
800mW
Transistor Element Material :
SILICON
Transition Frequency :
390MHz
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount :
No
Power Dissipation :
800mW
Datasheets
2SC6097-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC6097-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, 2SC6097-E pinout, 2SC6097-E datasheet PDF, 2SC6097-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC6097-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC6097-E


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SC6097-E Overview


In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 135mV @ 100mA, 1A.Keeping the emitter base voltage at 6.5V allows for a high level of efficiency.390MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

2SC6097-E Features


the DC current gain for this device is 300 @ 100mA 2V
the vce saturation(Max) is 135mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 390MHz


2SC6097-E Applications


There are a lot of ON Semiconductor
2SC6097-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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