2SC6011
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- Mfr.Part #
- 2SC6011
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 15A TO3P
- Stock
- 6,168
- In Stock ：
- 6,168
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 160W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 3A 4V
- Mount :
- Through Hole
- Frequency - Transition :
- 20MHz
- Collector Emitter Voltage (VCEO) :
- 500mV
- Factory Lead Time :
- 24 Weeks
- Max Power Dissipation :
- 160W
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Collector-Emitter Voltage-Max :
- 200 V
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-3P-3, SC-65-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Published :
- 2012
- Pin Count :
- 3
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- TO-3P
- Transistor Type :
- NPN
- Number of Terminals :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 200V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Manufacturer :
- Sanken Electric Co Ltd
- Package :
- Bulk
- Packaging :
- Bulk
- Number of Elements :
- 1
- Collector Current-Max (IC) :
- 15 A
- RoHS :
- Compliant
- JESD-30 Code :
- R-PSFM-T3
- Collector Emitter Breakdown Voltage :
- 200V
- Terminal Position :
- Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- DC Current Gain-Min (hFE) :
- 50
- Series :
- --
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 20MHz
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 15A
- Max Collector Current :
- 15A
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Product Status :
- Obsolete
- Pbfree Code :
- yes
- Datasheets
- 2SC6011
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Bulk Through Hole
2SC6011 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 3A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 500mA, 5A.A transition frequency of 20MHz is present in the part.The product comes in the supplier device package of TO-3P.There is a setting of 200 V for maximal collector-Emitter voltage.A 200V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 15A volts at its maximum.
2SC6011 Features
the DC current gain for this device is 50 @ 3A 4V
the vce saturation(Max) is 500mV @ 500mA, 5A
a transition frequency of 20MHz
the supplier device package of TO-3P
2SC6011 Applications
There are a lot of Sanken
2SC6011 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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