2SC6017-E
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- Mfr.Part #
- 2SC6017-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 10A TP
- Stock
- 21,743
- In Stock ：
- 21,743
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 180mV
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 250mA, 5A
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e6
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Max Collector Current :
- 10A
- Factory Lead Time :
- 2 Weeks
- Packaging :
- Bulk
- Published :
- 2012
- hFE Min :
- 200
- Collector Emitter Voltage (VCEO) :
- 360mV
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 50V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Collector (Ic) (Max) :
- 10A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Max Power Dissipation :
- 950mW
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SC6017-E
NPN 150°C TJ 10μA ICBO SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC6017-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of 180mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.
2SC6017-E Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 360mV @ 250mA, 5A
the emitter base voltage is kept at 6V
2SC6017-E Applications
There are a lot of ON Semiconductor
2SC6017-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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